![]() ![]() A library of atomically thin metal chalcogenides. Vapour–liquid–solid growth of monolayer MoS 2 nanoribbons. Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass. Chemical vapor deposition of large-size monolayer MoSe 2 crystals on molten glass. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Large-area synthesis of high-quality and uniform monolayer WS 2 on reusable Au foils. Strain and structure heterogeneity in MoS 2 atomic layers grown by chemical vapour deposition. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Growth of large-area and highly crystalline MoS 2 thin layers on insulating substrates. Graphene and two-dimensional materials for silicon technology. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. Electronics based on two-dimensional materials. Our method offers a general and scalable route to produce TMDC single crystals towards future electronics.įiori, G. We further demonstrated the single-crystalline MoSe 2 on C/A sapphire. A statistical analysis of 160 field-effect transistors over a centimetre scale showed a >94% device yield and a 15% variation in mobility. We fabricated field-effect transistors and obtained a mobility of 102.6 cm 2 V −1 s −1 and a saturation current of 450 μA μm –1, which are among the highest for monolayer MoS 2. ![]() A set of microscopies, spectroscopies and electrical measurements consistently showed that the MoS 2 is single crystalline and has an excellent wafer-scale uniformity. Although the change of miscut orientation does not affect the epitaxial relationship, the resulting step edges break the degeneracy of nucleation energy for the antiparallel MoS 2 domains and lead to more than a 99% unidirectional alignment. We designed the miscut orientation towards the A axis (C/A) of sapphire, which is perpendicular to the standard substrates. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS 2) single crystals on a C-plane sapphire. However, despite extensive efforts 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore’s law beyond silicon 1, 2, 3. ![]()
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